The "Guangdong Everbright Research and Manufacturing Center" project held a groundbreaking ceremony

On April 22nd, the "Guangdong Everbright Research and Manufacturing Center" project held a groundbreaking ceremony in Hengkeng, Liaobu, Dongguan. The project involves the field of gallium nitride, covering the entire industry chain of substrates, epitaxy, and devices.

The project is located in the Dongguan East Intelligent Manufacturing and Dongguan New Materials Industry Base. The first phase of the project has an investment of 10 billion yuan and covers an area of about 390 acres. It is expected to be completed and put into operation in 2025, with a comprehensive sales revenue of about 14.94 billion yuan after production. Among them, the "Guangdong Everbright Third Generation Semiconductor Research and Manufacturing Center Zone 1" project is included in the construction of the first phase project, with an estimated total investment of 4.4 billion yuan, nearly 50% of the total investment of the first phase project.

The main construction content of the "Guangdong Everbright Third Generation Semiconductor Research and Manufacturing Center Zone 1" project includes precision semiconductor equipment manufacturing, gallium nitride substrate production line, gallium nitride device production line, blue-green Mini/MicroLED epitaxial chip production line, and supporting special gas plant facilities; It is expected to cover an area of 135203 square meters and a building area of 283928 square meters. After completion, it will produce 2-4-inch gallium nitride substrates, 2-6-inch GaN on GaN/Si devices, and 4-inch blue-green MiniLED epitaxial chips.

Guangdong Everbright Enterprise Group Co., Ltd. was founded in 1983 and headquartered in Dongguan, Guangdong. Its subsidiary, Zhongjia Semiconductor, is expected to be the main implementer of this project. Zhongjia Semiconductor, jointly built by Peking University and Guangdong Everbright Group, is the first domestic enterprise specializing in the production of gallium nitride substrate materials. In February 2018, Zhongjia announced its first trial production of a 4-inch self-supporting GaN substrate in China, and expected to achieve regular mass production by the end of the same year.